Insulating semiconductor layers are irreplaceable for electrical isolation and low RF attenuation of semiconductor device structures. In this case, usually a so-called deep impurity is used. Although dopants form deep impurities for many semiconductors, the semiconductors often still have a residual conductivity.
The group III-nitride are semiconductors of the bindings of indium, aluminium and gallium nitride. These materials are suitable for, inter alia, the application as photoelectric sensors, as well as optical modulators. A challenge for the manufacturing of the third group of nitrides is the focused structuring of these materials in thin layers on each substrate
The increasing feed of regenerative energy sources, e.g. solar and wind energy, requires further expansions of the German and European pipeline network. The establishment of new overland power grids often faces resistance from the population. It is necessary to develop forward-looking solutions to create new electricity and data highways.
Electric and electronic devices can undesirably radiate high frequency defect through cabling. To suppress these interfering signal integrated ferrite cores are used. With their help, the conformity of electronic devices - in the view of electromagnetic compatibility is ensured.
During the contactless energy transfer large stray fields occur. As a compensation condensers are used which, in real-life operation, underlie parameter fluctuations. A more efficient and automatic balance of those fluctuations during the operation can be achieved through an active reactive power. Therefore, the efficiency, transmitted active power, as well as the construction size and the costs can be optimized.
The car industry, medical technology as well as the communication industry more and more require - instead of using common circuit boards - placing and wiring complex electronic semiconductor devices, with a high number of electric in- and outputs, on three-dimensional circuit carriers. This is enabled through injection moulded plastic-circuit carriers (Molded Interconnect Devices = MIDs).
The group III-nitride are semiconductors of bindings of indium-, aluminium- and gallium nitride. These materials are suitable for, inter alia, use as photovoltaic cells. A challenge for the manufacturing of photovoltaic cells of the group III-nitride is the thin application of these materials on a substrate. The invention solves a problem of layer formation on silicon substrates, the so-called “meltback etching”, and enables a low impedance heterojunction. Through this procedure there are, inter alia, tandem solar cells on the basis of long-lasting and resistent to radiation group III-nitride on silicon and germanium substrates possible.
In the layer construction of components from the group III nitrides are usually foreign substrates used for cost reasons. Group III nitride own substrates are, due to the complex manufacturing process, so far very expensive.
The transmission of electricity generated in off-shore- wind parks to feed-in stations on land is currently done using submarine cables. They consist of stranded individual cores whose production in longer lengths is technically demanding and cost-intensive. Alternatives are ribbon cables, which have been used primarily in the automotive sector.